New Gate Driver IC Withstands Huge Ground Shifts

  • High power density in low-voltage power conversion systems
  • Available in ultrasmall leadless TSNP package

In Switching Mode Power Supplies( SMPS ), ground potential is the reference for input signals of the gate driver IC. During switching of power MOSFETs, parasitic inductances produce ground-shifts that may cause false triggering of the gate-driver IC. Infineon Technologies AG adds a new IC to its cost-effective and compact-size EiceDRIVER 1EDN TDI (truly differential inputs) 1-channel gate-driver family to prevent such consequences. 

The 1EDN7550U driver offers significant board-area savings, which together with its versatility makes it a very attractive part”, said Mikael Appelberg, Chief Technology Officer at Flex Power Modules.

Withstands static and transient ground shifts

The EiceDRIVER 1EDN TDI can withstand static ground-shifts of up to ± 70 V and transient ground shifts of up to ± 150 Vpeak with 3.3V PWM input signal at the application level. The EiceDRIVER 1EDN7550U enables  25 V and 40 V OptiMOS MOSFETs to operate in switched capacitor topologies at 1.2 MHz switching frequency. A high power density of 3060 W/in3 and a 97.1 % peak efficiency (including auxiliary losses) have proven to be possible even in such applications.

Flexibility in PCB layout designing


The combination of tiny size and ground-shift robustness enables two of these gate-driver ICs to operate in a 48 V half-bridge configuration. Concurrently, designers have the freedom to place these gate-driver ICs in the PCB layout wherever they fit best which is key to enabling industry-leading power density.


The EiceDRIVER 1EDN TDI family is available in a standard SOT-23 6-pin package and the new device (1EDN7550U) is housed in an ultrasmall (1.5 mm x 1.1 mm x 0.39 mm) 6-pin leadless TSNP package. 




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