New SiC Schottky Diode Series By Infineon For Better Power Reliability

  • Enhances safety as compared to Si only based devices
  • Can achieve even higher efficiency when combined with company’s other power ICs

Infineon Technologies has expanded its CoolSiC™ Schottky diode 1200 V portfolio with the addition of six D²PAK real 2-pin package devices. With its help, designers can now achieve a new level of power density and reliability compared to Si solutions.

SMD packages allow designs to become more compact and cost-effective. Moreover, the new D²PAK real 2-pin package eliminates the middle pin for offering 4.7 mm creepage and 4.4 mm clearance distance. Compared to a standard D²PAK package, this enhances safety margins.

Comprehensive operating features

The new devices use Infineon’s CoolSiC Schottky diode 1200 V technology G5, that are rated from 2A to 20A and provide best-in-class forward voltage and high surge current capability. Additionally, it prevents reverse recovery losses and allows temperature-independent switching. These features also facilitate lower cooling requirements and smaller magnetics when used at a higher switching frequency. The CoolSiC Schottky diodes 1200 V G5 are rated from 2 A to 20 A and represent the industry’s broadest portfolio in a D²PAK real 2-pin package.


Combined with other Infineon products, such as CoolSiC MOSFETs 1200 V or TRENCHSTOP™ 1200 V IGBT6 and EiceDRIVER™ gate driver ICs, the new portfolio offers a complete solution for highest efficiency designs.


The diodes are a perfect fit for applications such as industrial power supplies, DC charging stations, uninterruptable power supplies and solar string inverters.


The CoolSiC Schottky diodes 1200 V G5 can be ordered now.

Open Radio Access Network For Increased 4G/5G Coverage For CAV


Please enter your comment!
Please enter your name here

Are you human? *