Power Integrations’ SiC MOSFETs Now Support Gate-Drive Voltage

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  • Includes advanced automotive circuit safety features
  • Enables fast gate switching speed and voltage management

Power Integrations has announced that its SIC118xKQ SCALE-iDriver™, a high-efficiency, single-channel gate driver for silicon carbide (SiC) MOSFETs, is now certified to AEC-Q100 for automotive use. Devices will now be able to support gate-drive voltage requirements of commonly used SiC MOSFETs and feature sophisticated safety and protection features.

The SIC1182KQ (1200 V) and SIC1181KQ (750 V) SCALE-iDriver devices are optimised for SiC MOSFET operation in automotive applications, to enable rail-to-rail output, fast gate switching speed, unipolar supply voltage (to support positive and negative output voltages), integrated power and voltage management and reinforced isolation. The new single-channel SIC118xKQ gate drivers provide up to 8A and suit SiC MOSFETs with standard gate-emitter voltages from +15 V, with various negative voltages in the range from -3 V to -15 V.

Increased safety

To facilitate safe operation and soft turn-off under faulty conditions, Drain to Source Voltage (VDS) monitoring, SENSE readout, primary and secondary Undervoltage Lock-out (UVLO), current-limited gate drive and Advanced Active Clamping (AAC) have been included. AAC in combination with VDS monitoring ensures safe turn-off in less than 2 µs during short-circuit conditions. Gate-drive control and AAC allows gate resistance to be minimized. This reduces switching losses and maximizes inverter efficiency.

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By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power Integrations delivers a revolution in gate-driver IC technology compared to opto-, capacitive- or Si- isolated magnetic couplers. The combination dramatically improves isolation capability and enables safe, cost-effective designs for inverters with very few external components up to 300 kW.

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Michael Hornkamp, senior director of marketing for automotive gate-driver products at Power Integrations: “Silicon carbide MOSFET technology opens the door for smaller, lighter automotive inverter systems. Switching speeds and operating frequencies are increasing; our low gate resistor values maintain switching efficiency, while our fast short-circuit response quickly protects the system in the event of a fault.”

He adds, “SCALE-iDriver sets a new standard in isolation robustness for functional safety; even if a power device causes catastrophic driver failure, SCALE-iDriver’s isolation remains intact ensuring that no part of the chassis will carry life-threatening high voltages.”

Devices exhibit high external magnetic field immunity and are available in a compact eSOP package that provides ≥9.5 mm of creepage and clearance, using material that has the highest CTI level (CTI =600 per IEC 60112).


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