- Equipped with high efficiency and robust operation for better performance as compared to Si MOSFETS
ON Semiconductor has launched a diverse range of wide bandgap (WBG) devices with the introduction of two new silicon carbide (SiC) MOSFET families. The 1200V and 900V N-channel SiC MOSFETs have been developed for use in a variety of demanding applications in solar power inverters, onboard charging for electric vehicles (EV), uninterruptible power supplies (UPS), server power supplies and EV charging stations, the new devices offer superior switching performance as compared to silicon (Si) MOSFETs.
A fast intrinsic diode with low reverse recovery charge significantly reduces power losses, boosts operating frequencies and increases the power density of the overall solution. 1200V devices are rated at up to 103A (ID Max.), while 900V devices are rated at 118A. For applications requiring high currents, these can be easily operated in parallel, due to their positive temperature coefficient/temperature independence.
High-frequency operation is further enhanced by the small chip size that gives a low device capacitance and reduces gate charge (Qg) to as low as 220 nC. At high-frequencies, switching losses are also reduced. These enhancements improve efficiency, reduce EMI when compared with Si-based MOSFETs, and allow for the use of fewer (and smaller) passive components. The highly robust SiC MOSFETs offer higher surge ratings, improved avalanche capability and improved short circuit protection when compared to Si devices, thus delivering higher reliability and longer lifetimes for modern power applications. A lower forward voltage provides threshold-free on-state characteristics that reduce the static losses during device operation.
Gary Straker, Vice President/General Manager, Power MOSFET Division, Power Solutions Group, ON Semiconductor said, “If design engineers are to meet the challenging efficiency and power density goals that modern renewable energy, automotive, IT and telecom applications demand, then they require high performance, high-reliability MOSFET devices. ON Semiconductor’s WBG SiC MOSFETs extend performance beyond what was possible with silicon devices, delivering lower losses, higher operating temperatures, faster switching, improved EMI and better reliability. Further supporting the engineering community, ON Semiconductor provides a wide range of resources and tools that simplify and speed up the design process.”
All of ON Semiconductor’s SiC MOSFETs are Pb-free and Halide free. All devices are offered in industry-standard TO-247 or D2PAK packages.
For automotive applications, the devices are AEC-Q100 Qualified and PPAP capable.