New MOSFET Series By Infineon For Low-Frequency Applications

  • Provides low conduction losses for high-voltage switching
  • Has the smallest on-state resistance RDS(on)
600 V CoolMOS S7 QDPAK

With the launch of the 600V CoolMos S7 series of MOSFETS, Infineon Technologies has developed solutions for high energy efficiency, minimum conduction losses and fast response time for low-frequency switching applications.

In comparison to CoolMOS 7 products, CoolMOS S7 devices deliver even lower RDS(on), hence successfully achieving low switching losses at low on-resistance. This makes the devices possess the lowest on-state resistance (RDS(on)) in the market for a high-voltage switching.

Additionally, these MOSFETs enable cost-effective, simple, compact and modular high-efficiency designs, allowing systems to easily meet regulations and energy efficiency certification standards (i.e., Titanium® for SMPS), as well as, fulfil power budgets and reduce part count, heat sinks and total cost of ownership (TCO).

Other essential features


Besides having fast response time and low on-state resistance (RDS(on)), the MOSFET series also includes:

  • Optimised conduction performance
  • Improved thermal resistance
  • High-pulse current capability
600 V CoolMOS S7 TO-220

Applications for the devices are active bridge rectification, inverter stages, PLCs, power solid-state relay and solid-state circuit breakers.

600 V CoolMOS S7 TO-Leadless


The 22 mΩ 600 V CoolMOS S7 device is available in TO-leadless and TO-220, the 40 mΩ and 65 mΩ devices are available in TO-leadless packages and the 10 mΩ CoolMOS S7 MOSFET in a top side cooled QDPAK will be on stock in Q4 2020.

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