- Features lower losses and excellent thermal behaviour
- Focusses on solving issues concerning power storage
Infineon Technologies announces the expansion of its comprehensive product portfolio for 650 V silicon carbide (SiC) devices by launching the CoolSiC™ MOSFETs. With this step, Infineon intends to address the growing demand for energy efficiency, power density, and robustness in applications such as server, telecom and industrial SMPS, solar energy storage systems, UPS, motor drive and EV-charging.
Like all its predecessors, the new CoolSiC MOSFETs are based on Infineon’s state-of-the-art semiconductor technology and rated from 27 mΩ to 107 mΩ. This allows the SiC devices to offer greater reliability, best-in-class switching and conduction losses.
Additionally, the devices feature high transconductance level (gain), 4 V threshold voltage (Vth) and short-circuit robustness for lower losses.
In comparison to other silicon solutions out there, the 650 V CoolSiC MOSFETs offer an outstanding switching efficiency. Thanks to a low on-state resistance (RDS(on)) dependency on temperature, they feature excellent thermal behaviour.
The devices are robust and stable for retaining a very low level of reverse recovery charge (Qrr). The commutation-robustness helps in achieving an overall system efficiency of 98 per cent through the usage of continuous conduction mode totem-pole power factor correction (PFC).
“With this launch, Infineon complements its broad silicon, silicon carbide, and gallium nitride-based power semiconductor portfolio in the 600 V / 650 V power domain,” said Steffen Metzger, Senior Director High Voltage Conversion at Infineon’s Power Management & Multimarket Division. “It underlines our unique position in the market being the only manufacturer with such a broad offering for all three power technologies. Additionally, the new CoolSiC family supports our claim to be the number 1 supplier of SiC MOSFET switches for industrial purposes.”
To ease application design and ensure high-performance of CoolSiC MOSFETs 650 V, Infineon offers 1-channel and 2-channel galvanically isolated EiceDRIVER™ gate-driver ICs. This combination of CoolSiC switches and gate-driver ICs will help lower system, as well as, total ownership costs and enable energy efficiency gains. The CoolSiC MOSFETs also work seamlessly with other ICs from Infineon’s EiceDRIVER gate-driver family.
The TO-247 3-pin and TO-247 4-pin IC packages will be available starting March 2020.