RF Power Transistor from Ampleon For Medical and Industrial Uses

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  • High breakdown voltage enables class E operation
  • ESD protection enables class C operation

Ampleon’s ART2K0FE, 2000 W is an advanced and rugged LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor for industrial, scientific and medical applications in the HF to 400 MHz band including plasma generators, MRI systems, CO2 lasers and particle accelerators.

Other uses are found in radio and VHF TV broadcast transmitters as well as HF communications and Radar systems in the Aerospace industry.

Features and benefits

High breakdown voltage enables class E operation up to VDS = 50 V, while the ART2K0FE is qualified up to a maximum VDS of 65 V. Integrated dual-sided ESD protection enables class C operation and complete switch-off of the transistor.

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Other features include easy power control, high efficiency and excellent thermal stability.

The device is RoHS compliant and designed for broadband operation.

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