This Agreement Will Consummate The Growing Demands Of IC


  • ROHM Group Company SiCrystal and STMicroelectronics Announce Multi-Year Silicon Carbide Wafer Supply Agreement
  • The agreement will boost industrial flexibility and support the commercial expansion of  SiC products in automotive and industrial applications

 STMicroelectronics recently announced they are signing a multi-year silicon carbide (SiC) wafers supply agreement with SiCrystal. SiCrystal is a ROHM group company. It holds a top share of SiC wafers in Europe.

The agreement governs the supply of over 120 million dollars of advanced 150mm silicon carbide wafers by SiCrystal to STMicroelectronics. These wafers will be supplied during the period when the demands for silicon carbide power devices will ramp up in the market.


Jean-Marc Chery, President and CEO of STMicroelectronics recently talked about the new collaboration saying,

This additional long-term SiC substrate supply agreement comes on top of the external capacity we have already secured and the internal capacity we are ramping. It will enable ST to increase the volume and balance of the wafers we will need to meet the strong demand ramp-up from customers for automotive and industrial programs over the next years.

Dr Robert Eckstein, President and CEO of Sicrystal, ROHM group company also added saying,

“ Si Crystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC wafers for many years. We are very pleased to enter into this supply agreement with our longstanding customer ST. We will continue to support our partner to expand silicon carbide business by ramping up wafer quantities continuously and by providing reliable quality at all times. “

The adoption of power solutions with SiCs is accelerating in both the automotive and industrial markets. With this agreement, the two companies will contribute to the widespread use of SiC in these markets.

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