Driving Power MOSFETs Using This Gate Driver Design

-Manas

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  • Toshiba released a new reference design for a Mosfet driver. The TPD7104AF is a single-output N-channel power MOSFET gate driver
  • Due to high current dissipation and regulated drain voltage, this driver can be used for high-end applications such as battery management systems and solid-state relays

Mechanical relays have traditionally been used as switches. They were used to open and close a path between a power supply (e.g., Battery) and a load. Mechanical contacts have limited life as it wears out with on/off cycles.

Need for complex integrated systems

Semiconductor-based solid-state relays are coming into widespread use for applications requiring long-term reliability. The need for complex integrated systems has increased over time. In general, solid-state relays are made up of low-on-resistance discrete N-channel power MOSFETs. It can be used to create a high-current solid-state relay. This reduces the overall power loss and heat generated by the device.

Proven and tested reference design

Toshiba released a new reference design for a Mosfet driver. The TPD7104AF is a single-output N-channel power MOSFET gate driver. It features a charge pump for high-side switching applications. This driver can realize high current load switch with external N- channel MOSFETs.

Schematic design of the circuit
Schematic design of the circuit

Features load short-circuit detection

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The TPD7104AF also has a comparator for load short-circuit (overcurrent) detection. Additionally, it has a power supply reverse connection protection circuit. These two features ensure safer operation of high-current applications. This reference guide focuses on the utilisation of these features available with the TPD7104AF.

Features a small PS-8 package size

The design features an integrated charge pump circuit. A charge pump consists of an oscillation circuit, diodes and capacitors. Each stage of a charge pump boosts the voltage stored in the capacitor. It can be used to drive the high side when MOSFETs are driven by both the upper and lower arms. Unlike a bootstrap circuit, the charge pump does not impose any limit to the duty cycle of the output device.

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The device has a very small package size of PS-8 standard. Upon electrical characteristics, the device features a low drain-source on-resistance of 0.6 milliohms. The typical gate-to-source voltage is measured to be 10 volts. As for the current considerations, the device has a drain-source voltage of up to 40 Volts with a continuous current dissipation of up to 250 amperes.

Design Files available

Due to high current dissipation and regulated drain voltage, this driver can be used for high-end applications such as battery management systems and solid-state relays.

The design is released by Toshiba. The RD016 design contains documents such as design schematics, bill of materials, and PCB layouts.

These files can be downloaded here.


 

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