90 Watt Transistor That Offers High Efficiency And High Gain

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Serves wireless infrastructure, active antenna systems, military & commercial radar, land mobile and military radio communications and test instrumentation

Qorvo’s QPD0060 is a high-gain, wide band GaN transistor and over-molded DFN discrete power amplifier with excellent eficiency. The device is a single stage unmatched power amplifier transistor.

The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a microcell base station power amplifier.

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The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz with 90 Watts of P3dB output power and maximum drain efficiency of 74.7 percent. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz. Linear gain is 19.5 dB and efficiency-tuned P3dB gain is 21.5 dB. Designed for 48 V operation. The QPD0060 is functional as either a driver or final stage it’s both CW and pulse capable. It is offered in a plastic overmold, SMT package.

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