SiC power products that improve system efficiency, robustness and power density in various applications
Demand is growing for SiC power products that improve system efficiency, robustness and power density in automotive, industrial and aerospace and defence applications. Microchip Technology Inc., via its Microsemi subsidiary, announced the production release of a family of SiC power devices that offers ruggedness and the performance benefits of wide-bandgap technology.
Microchip’s 700 V SiC MOSFETs and 700 V and 1200 V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC power modules that meet the needs of Electric Vehicles (EVs) and other high-power applications in fast-growing markets.
The company’s SiC SBDs perform approximately 20 percent better than other SiC diodes in these Unclamped Inductive Switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage.
Microchip’s SiC MOSFETs also outperform these ruggedness tests, demonstrating excellent gate oxide shielding and channel integrity with little lifetime degradation in parameters even after 100,000 cycles of Repetitive UIS (RUIS) testing.
- Efficient switching at higher frequencies
- Long-term reliability
Microchip is one of the few suppliers to provide a range of both silicon and SiC discrete and module solutions. The company’s products are ideally suited for the growing number of EV systems including external charging stations, onboard chargers, DC-DC converters and powertrain/traction control solutions. The new SiC devices are backed by Microchip’s customer-driven obsolescence practice, which ensures devices will continue to be produced for as long as customers need them.
Microchip’s expanded SiC portfolio is supported by a range of SiC SPICE models, SiC driver board reference designs and a Power Factor Correction (PFC) Vienna reference design. All the company’s SiC products are available in production volumes along with their associated support offerings. A variety of die and package options are available for the SiC MOSFETs and SiC diodes.
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