Impressive RDS(on) Combined With Superior Switching Performance

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Based on Infineon´s thin wafer technology it enables significant performance benefits and will cover a wide voltage range

OptiMOS™ 6 40 V_PQFN 3×3

 

OptiMOS™ 6 40 V_SuperSO8

Committed to set new technology standards in discrete power MOSFET technologies, Infineon Technologies introduces its new OptiMOS™ 6 family.

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The new 40 V MOSFET family has been optimized for synchronous rectification in SMPS for servers, desktop PCs, wireless chargers, quick chargers, and ORing circuits.

Compared to the previous generation, the new OptiMOS 6 40 V delivers a 30 percent reduced on state resistance and improved figure of merits (Qg x RDS(on) down by 29 percent and Qgd x RDS(on) down by 46 percent). Hence, used in SMPS applications the devices are ideal for efficiency optimization over a wide range of output power, avoiding the trade-off between low and high load conditions.

Availability

The OptiMOS 6 power MOSFET 40 V family is available in two different packages:

  • SuperSO8, 5 mm x 6 mm, RDS(on) ranging from 5.9 mΩ down to 0.7 mΩ
  • PQFN 3×3, 3.3 mm x 3.3 mm, RDS(on) ranging from 6.3 mΩ down to 1.8 mΩ
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