UnitedSiC introduces new UF3C “FAST” Silicon Carbide FET series offering increased switching speeds and higher efficiency levels than their existing UJC3 Series.
To benefit the designers of power electronics systems, UnitedSiC has launched its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The company claims that the FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series. The devices offer a ‘drop-in’ replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts. This means system upgrades for greater performance and efficiency can be effected without requiring changes to the existing gate drive circuitry.
Applications suitable for use with the UF3C FAST series include the full range of hard switched circuits such as active rectifiers and totem-pole PFC stages, commonly used in EV charging, telecom rectifiers and server supplies.
Key features and benefits of the UF3C FAST series
Turn-on losses can be reduced based on a 50 percent reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design.
Built on UnitedSiC’s Gen-3 SiC transistor technology, the UF3C FAST series integrates a faster SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, a high-performance body diode and easy gate drive of the MOSFET. Compared with other wide band-gap technologies, the SiC cascode devices support standard 12 V gate drive, and have assured avalanche ratings (100 percent production-tested), according to the firm.
“UnitedSiC’s new FAST SiC FET range is simple to use and offer a great cost-performance option,” said Anup Bhalla, VP Engineering at UnitedSiC. “The range offers design engineers the opportunity to extract even higher levels of efficiency from high-power designs.”
The range includes the following part numbers: UF3C120040K3S (1200 V / 35 mΩ), UF3C065030K3S (650 V / 30 mΩ) and UF3C065040K3S (650 V / 42 mΩ).
Data sheets and a SiC FET user guide are available here, which include recommended RC snubber values tested by UnitedSiC for optimal performance.