Littelfuse’s 1700V, 1 Ohm SiC MOSFET enables high-frequency, high-efficiency power control applications such as electric and hybrid vehicles, datacenters, and auxiliary power supplies
Littlefuse expanded its SiC MOSFET devices portfolio by launching its first 1700V, 1 Ohm, SiC MOSFET, the LSIC1MO170E1000.
The LSIC1MO170E1000 adds to the firm’s 1200V SiC MOSFETs and Schottky diodes already released. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.
High-efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications including electric and hybrid vehicles (EV/HEV), data centers, and auxiliary power supplies, says Littelfuse. Compared with similarly rated silicon insulated-gate bipolar transistors (IGBTs), the LSIC1MO170E1000 SiC MOSFET enables system-level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system-level costs, said the firm.
Also, the SiC MOSFETs deliver on-par or better performance in all aspects compared head-to-head with other industry-leading SiC MOSFET devices on the market, it is claimed.
“This product can improve existing applications, and the Littelfuse application support network can help new design-in projects,” says Michael Ketterer, global product marketing manager, Power Semiconductors, of Littelfuse’s Semiconductor business unit. “SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs,” he adds. “Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on-resistance, and junction capacitances.”
Typical applications for the LSIC1MO170E1000 include
Solar inverters, switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS), motor drives, high-voltage DC/DC converters, and induction heating.
The new 1700V, 1Ω SiC MOSFETs offer the following benefits:
- optimized for high-frequency high-efficiency applications
- extremely low gate charge and output capacitance
- low gate resistance for high-frequency switching
LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. Sample requests can be placed through authorized Littelfuse distributors worldwide.
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