UnitedSiC expands SiC JFET portfolio with Gen-3 1200 V and 650 V options

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High-performance silicon carbide FETs for circuit protection in rail, electric aircraft and traction, along with high voltage switching power conversion.

UnitedSiC, a manufacturer of silicon carbide power semiconductors, expands its SiC JFETs series by announcing Generation 3 1200 V and 650 V silicon carbide JFETs.

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These devices are normally-ON with zero voltage gate drive, particularly suited for applications which needs fast action, solid-state circuit breakers and circuit protection, and usually where a default to an On-state is necessary in the absence of gate power.

In connection with a Si-MOSFET these devices are generally used in series as robust ‘supercascodes’, which provide all the advantage of wide band-gap technology with very high operating voltages and easy gate drive.

As devices, SiC JFETs have an extremely good RDSA figure of merit (normalized ON-resistance with die area), giving low insertion loss in circuit protection applications. The parts can be easily parallelized, due to their positive temperature coefficient of RDSON and flat gate threshold voltage curve over temperature. When operated in ‘linear’ mode, SiC JFETs show a wide Safe Operating Area (SOA) without current crowding and current filament formation that other technologies suffer from, making them particularly suitable for electronic loads and current limiters. Absence of a gate oxide in the SiC JFETs gives the added benefits of radiation hardness and general robustness.

The new Generation 3 devices are coded UJ3N120070K3S (1200V 70 mΩ), UJ3N120035K3S (1200 V 35 mΩ), UJ3N0650080K3S (650 V 80 mΩ) and UJ3N065025K3S (650V 25 mΩ). All of these options are available in the convenient TO-247-3L package.

In the fabrication of the devices UnitedSiC uses its proprietary 6-inch wafer process along with advanced wafer-thinning and die-attach techniques to obtain preeminent junction-to-case thermal resistance

Some of the other applications are electronic loads, wireless charging synchronous rectification and power switches in low power flyback converters where the JFET in a cascode configuration provides easy startup. Markets addressed to circuit protection in rail, electric aircraft and traction, along with high voltage switching power conversion.

“UnitedSiC’s SiC JFETs offer unbeatable system value when you need normally-ON, super robust devices,” said Anup Bhalla, VP Engineering at UnitedSiC. “The need for circuit protection is growing in tandem with the continuing advancement of power electronics. Very fast acting circuit breakers can simplify power circuitry in rail traction, ships and increasingly electronic aircraft, and SiC JFETs are the simplest, most efficient option for current limiting in these types of applications.”

Click here to know more about UnitedSiC’s JFETs. 

Availability and Price of the product:

Starting at a price of $5 UnitedSiC’s Gen-3 SiC is available for 1000 pieces at Mouser and other local distributors.

Company Profile

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors for electric vehicle (EV) chargers, DC-DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.

READ
New 1200 V SiC FETs Offer Simple Substitution For IGBT, Si & SiC-MOSFETs
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