Gallium nitride FEM For X Band Radar

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New Gallium Nitride (GaN) MMIC front-end module
(FEM) designed for X-Band radar applications within the
9-10.5 GHz range

GaN technology is a suitable choice for the next generation of active electronically scanned array (AESA) antennas that require lower size, weight, power, and cost.

RFMW now provides an X-band front-end module solution developed for next-generation AESA radar applications. The Qorvo QPM2637 FEM is a compact chip, incorporating a T/R switch, power amplifier, low noise amplifier and power limiter into a 6x6mm package.

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Operating in the 9 to 10.5GHz range, this GaN FEM solves many challenges associated with AESA radar system designs, including greater power output, higher efficiency, reliability, power and survivability, as well as savings in size, weight and cost, the company claims.

Saturated output power from the transmit amplifier is 36dBm with small signal gain of 32dB.

Noise figure, on the receive side, is 2.7dB with small signal gain of 21dB.

Built with field-proven GaN technology, the QPM2637 can withstand up to 4W of input power on the receive side without permanent damage, compared with a typical GaAs LNA, which can be damaged by less than 100mW.

New GaN FEM Product Features

• Frequency Range: 9 – 10.5 GHz
• RX Noise Figure: 2.7 dB
• RX Small Signal Gain: 21 dB
• RX OTOI : 21 dBm
• TX Large Signal Gain: 23 dB
• TX Saturated Power: 36 dBm, Pulsed
• TX PAE: 38% @ 36 dBm Pout, Pulsed
• Package Dimensions: 6 x 5 x 1.8 mm

Applications

• Electronics Warfare (EW)
• Commercial and Military Radar
• Communications

For more details, click here.

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