Infineon’s new 950 V MOSFET enables higher power density designs, BOM savings, and lower assembly cost
Switched mode power supplies (SMPS) are a vital component of modern electronics systems. When it comes to the selection of MOSFETs for SMPS systems, higher density, low-power SMPS designs require high voltage MOSFETs in a growing number. A new 950 V CoolMOS P7 Superjunction MOSFET from Infineon helps designers to meet even the most rigorous design requirements: for lighting, smart meter, mobile charger, notebook adapter, AUX power supply and industrial SMPS applications.
Infineon says that the new solution delivers excellent thermal and efficiency performance with lower bill of materials and overall production costs.
SMPS Design with 950V MOSFET
The product claims outstanding DPAK R DS(on) enabling higher density designs. The excellent V GS(th) and lowest V GS(th) tolerance make the MOSFET easy to drive and design-in. This component comes with an integrated Zener diode ESD protection. This results in better assembling yields and thus less cost, and less ESD related production issues. The MOSFET enables up to 1 percent efficiency increase and from 2 ˚C to 10 ˚C lower MOSFET temperature for more efficient designs. It also offers up to 58 percent lower switching losses compared to previous generations of the CoolMOS family. Compared to competing technologies in the market, the improvement is more than 50 percent.
The 950 V CoolMOS P7 comes in TO-220 FullPAK, TO-251 IPAK LL, TO-252 DPAK, and SOT-223 packaging. This makes it possible to change from THD to SMD device.
- Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3
- Enabling higher power density designs, BOM savings, and lower assembly cost
- Easy to drive and to design-in
- Better production yield by reducing ESD related failures
- Less production issues and reduced field returns
The new 950 V CoolMOS P7 is now available. For more information, click here.