Samsung unveils new dynamic random access memory (DRAM) technology for 5G and artificial intelligence (AI)-powered mobile devices
With super-fast 5G wireless networks and AI in focus for today’s smartphones and other mobile devices, these devices are reliant upon innovative memory technologies to keep up with the speed and storage requirements without increasing power or footprint.
To support this new trend, Samsung has developed the newest standard of random access memory (RAM), the LPDDR5, for use in upcoming 5G and AI-powered mobile applications.
First LPDDR5 DRAM Chip Offers 6.4Gbps Speeds
The new LPDDR5 chip can transfer data at a rate of 6.4 gigabits per second, making it 50 percent faster than the mobile dynamic RAM (DRAM) chips used in current flagship mobile devices (LPDDR4X, 4266Mb/s).
“By increasing the data transfer rate to 6.4 Gbps, the new LPDDR5 can send 51.2 gigabytes (GB) of data, or approximately 14 full-HD video files (3.7GB each), in a second”, Samsung noted.
The new chip sports 8GB of memory and is based on the 10nm fabrication process.
Further, compared to the previous LPDDR4X memory, the 8Gb LPDDR5 DRAM claims to reduce power consumption by up to 30 percent.
“This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions,” said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. “We will continue to expand our next-generation 10nm-class DRAM lineup as we accelerate the move toward greater use of premium memory across the global landscape.”
Samsung said it will offer the 10nm LPDDR5 DRAM chips in two bandwidths – 6.4Gbps at a 1.1 operating voltage (V) and 5.5Gbps at 1.05V – claiming that this will make it the most versatile mobile memory solution for next-generation smartphones and automotive systems.
To minimize the power consumption, the chip utilizes several low-power features that reduce power consumption by up to 30% to maximize mobile device performance and extend the battery life of smartphones. The chip lowers its voltage in accordance with the operating speed of the corresponding application processor, when in active mode. It also has been configured to avoid overwriting cells with ‘0’ values. Further, a ‘deep sleep mode’ cuts the power usage to approximately half the ‘idle mode’ of the current LPDDR4X DRAM.
Samsung has completed functional testing and validation of a prototype 8GB LPDDR5 DRAM package, which is comprised of eight 8Gb LPDDR5 chips.
The company plans to begin mass production of its next-generation DRAM lineups (LPDDR5, DDR5 and GDDR6) in line with the demands of global customers.
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