Faster, Less-power Consuming Flash Memory Chips Coming To Premium Smartphones

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256 gb memory
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Besides offering a lot of storage space, the new 256 Gb memory chip claims industry’s fastest data transfer speed of 1.4 Gbps with 30% lesser power consumption 

With smartphones getting faster and requiring a greater amount of memory, the demand for faster, higher capacity, less-power consuming memory solutions is ever increasing.

Continuing to drive this momentum, chipmaker Samsung has begun production of it’s fifth-generation 256 gigabit (Gb) V-NAND memory chips boasting a data transfer speed of 1.4 gigabits per second (Gbps) between the storage and memory. Samsung says this is the fastest data transfers now available, achieved with the first use of the ‘Toggle DDR 4.0’ interface. This translates for a 40-percent increase from its 64-layer predecessor. The chip is aimed at a variety of devices including premium smartphones.

Flash Memory Boosts Performance While Being Energy-efficient

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The new device has 90 layers of 3D charge trap flash (CTF) cells stacked in a pyramid with microscopic channel holes vertically drilled. These hundred-nanometers-wide channel holes contain 85 billion CTF cells that can store 3 bits of data each.

The height of each cell layer has been reduced by 20 percent. This prevents crosstalk between cells and increases the efficiency of the chip’s data processing, Samsung noted.

Samsung claimed that despite the boost in performance, the energy efficiency of the new chip remains comparable to that of the 64-layer chip. That’s primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts.

The new V-NAND boasts the fastest data write speed to date of 500-microseconds (μs). This is an improvement of 30-percent over the write speed of the previous generation.

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Another interesting feature of the new chip is that the response time to read-signals has been significantly reduced to 50μs.

“Samsung’s fifth-generation V-NAND products and solutions will deliver the most advanced NAND in the rapidly growing premium memory market,” said Kye Hyun Kyung, executive vice president of Flash Product and Technology at Samsung Electronics.

Going forward, Samsung is preparing to introduce 1-terabit (Tb) and quad-level cell (QLC) offerings to its V-NAND lineup.

The company plans to ramp up production of its fifth-generation V-NAND to meet the rising demand from super-computers, business servers, and mobile markets.

Click here for Press release.

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