Schottky diodes with power conversion efficiency to cut the cost
To reduce cost and boost efficiency for data centres, electric vehicle chargers and renewable energy systems Littelfuse, Inc., introduced an expanded portfolio of silicon carbide (SiC) power semiconductor devices with the addition of five GEN2 Series 1200 V, 3L TO-247 Schottky Diodes and three GEN2 Series 1200 V, 2L TO-263 Schottky Diodes.
When compared with silicon devices, GEN2 SiC Schottky Diodes reduce switching losses and allow for substantial increases in the efficiency and robustness of power electronics systems.
Amplify stages in DC-DC converters
GEN2 1200V Schottky Diode Series include Power Factor Correction (PFC), can be used to buck or boost stages in DC-DC converters, free-wheeling diodes in inverter stages (switch-mode power supplies, solar, UPS, industrial drives) and high-frequency output rectification—wherever improvements in efficiency, reliability, and thermal management are desired.
Designers and manufacturers of industrial power supplies, solar inverters, industrial drives, welding and plasma cutting equipment and EV/HEV charging stations may find it useful.
Compact and energy efficient
The GEN2 SiC Schottky Diodes dissipate less energy and can operate at higher junction temperatures. They require smaller heat sinks and enable a smaller system footprint. Additionally, it offers multiple advantages to designers of electric vehicle chargers, data centre power supplies and renewable energy systems.
The 3L TO-247 GEN2 SiC Schottky Diodes are accessible with current ratings of 10 A, 15 A, 20 A, 30 A and 40 A. The 2L TO-263 GEN2 SiC Schottky Diodes are available with current ratings of 10 A, 15 A and 20 A. They accommodate high surge currents without thermal runaway and operate at junction temperatures as high as 175 °C.
They are used for applications that require improved efficiency and reliability and simpler thermal management than standard silicon bipolar power diodes can provide.