New High Power RF Products Ready For 5G

high-power rf

New GaN and Si-LDMOS offerings to enable 5G claim high-performance in a compact footprint

As Gallium nitride (GaN) and silicon laterally diffused metal oxide semiconductor (Si-LDMOS) technologies have started to shine for the emerging 5G standard, NXP has unveiled new GaN and Si-LDMOS product options to enable 5G. The company has introduced new RF GaN wideband power transistors and expanded its Airfast third-generation Si-LDMOS portfolio of macro and outdoor small cell solutions.

New High-power RF products include:

  • A3G22H400-04S: Suitable for 40W base stations, this GaN product yields up to 56.5% efficiency and 15.4dB of gain and covers cellular bands from 1800MHz to 2200MHz.
  • A3G35H100-04S: Providing 43.8% efficiency and 14dB of gain, this GaN product enables 16 TX MIMO solutions at 3.5GHz.
  • A3T18H400W23S: This Si-LDMOS product is paving the way to 5G at 1.8GHz with Doherty efficiency up to 53.4% and gain of 17.1dB.
  • A3T21H456W23S: Covering the full 90MHz band of 2.11-2.2GHz, this solution exemplifies NXP’s Si-LDMOS performance for efficiency, RF power and signal bandwidth.
  • A3I20D040WN: Within NXP’s family of integrated ultra-wideband LDMOS products, this solution offers peak power of 46.5dBm with 365MHz wideband class AB performance of 32dB of gain, and 18% efficiency at 10dB OBO.
  • A2I09VD030N: This product offers peak power of 46dBm with class AB performance of 34.5dB gain, and 20% efficiency at 10dB OBO. The RF bandwidth is 575-960MHz.

NXP noted that the company’s diverse range of RF power technologies—which include GaN, silicon-LDMOS, SiGe, and GaAs – allows product options for 5G that span frequency and power spectrums with varying levels of integration.

GaN Technology Is Coming To Cars

NXP predicts that the future of 5G networks will depend on GaN and Si-LDMOS technologies and notes that the company is at the forefront in its RF power amplifier development.

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