SiC diodes provide higher reliability compared to silicon devices with technology that lowers losses and improves switching efficiencies
To include devices intended for demanding automotive applications, ON Semiconductor has announced the expansion of its silicon carbide (SiC) Schottky diode portfolio. The technology provides switching performance that is independent of temperature with no reverse recovery current.
Reduced system costs
The FFSHx0120 1200 Volt (V) Gen1 devices and FFSHx065 650 V Gen2 devices are enabled with zero reverse recoveries, low forward voltage, temperature independent current stability, extremely low leakage current, high surge capacity and a positive temperature coefficient. These diodes offer faster recovery, which in turn increases switching speeds thereby decreasing the size of the required magnetic component.
Consequently, the technology leads to space-saving solutions, reduced overall system costs and improved efficiency.
Suitable applications of SiC diodes
Electrical environments of automotive applications are quite harsh and to meet them, electrical environments of automotive applications, the diodes have been designed to withstand high surge currents. They include a unique, patented termination structure as well that improves reliability and boosts stability. Also, the diodes have an increased power density and a reduced EMI. The thermal performance and decreased system size make SiC diodes suitable for the growing number of high-performance automotive applications.
Driving energy efficiency
The Schottky range has been expanded with AEC qualified devices. The new AEC-Q101 diodes are designed for an automotive environment, a sector where saving space and weight is significant. They deliver reliability and ruggedness needed by modern propulsion applications along with performance benefits synonymous with Wide Band Gap (WBG) technologies. The diodes are available in popular surface mount and through-hole packages including TO-247, D2PAK and DPAK and have an operating temperature range of -55°C to +175°C.