Numerous applications have led to a steady increase in the demand of gate driver technologies to meet the drive requirements of different power semiconductors — including silicon-based power MOSFETs, insulated-gate bipolar transistor (IGBTs) and bipolar transistors, as well as the newer ones based on wide-bandgap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN).
To help power electronics engineers cope up with this increasing demand, Infineon has expanded its EiceDRIVER Compact family portfolio to include new high-frequency gate drivers that can be used for both silicon IGBTs and silicon carbide MOSFETs.
The new 300 mil compact gate drivers of the 1EDC family are recognized under UL1577 with Viso = 3000 Vrms for 1 s.
The EiceDRIVER Compact family consists of galvanically isolated drivers based on Infineon’s coreless transformer technology, enabling a common mode transient immunity of 100 kV/μs.
With current drive strengths of up to 6 A on separate output pins for sourcing and sinking, they’re ideal for IGBT based applications such as photovoltaic string inverters, charge stations for electric vehicles.
An important benefit of the chips is their high switching frequency of up to 1,000kHz, due to which they do not only drive IGBTs, but can also be integrated into demanding SiC MOSFET topologies.
The 1EDC Compact family provides a 300-mil wide body package for an increased creepage distance of 8mm leading to the UL1577 acknowledged insulation.
Furthermore, the driver ICs feature improved thermal behavior and can drive power devices with up to 40V output voltage.
They are marked by a well-matched propagation delay of 120ns (typical, max 150ns).
Additionally, the1EDC Compact can provide current drive strengths of up to 10A on separate output pins for sourcing and sinking.
Applications of the new Gate drivers:
- Photovoltaic string inverters
- Uninterruptable power supplies
- EV charging stations
- Industrial drives
- Welding equipment
- Commercial and agricultural vehicles
Key features of the new Gate drivers:
- Single channel isolated high-voltage gate driver IC
- 12 V input-to-output isolation voltage
- DSO-8 300 mil wide body package with 8 mm creepage distance
- Drives high-voltage power MOSFETs and IGBTs
- Up to 6A minimum peak rail-to-rail output
- Separate source and sink outputs or active Miller clamp
The EiceDRIVER 1EDC Compact 300 mil is in production. The functional isolated EiceDRIVER 1EDI Compact 150 mil and 300 mil families are also available and might be preferred for applications where UL certification is not required.
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