Toshiba presents a small MOSFET with high ESD protection optimized for use in automotive applications such as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint.
Key features of the dual MOSFET “SSM6N813R” include small package, high ESD protection, and Low RDS(ON).
Featuring a maximum drain-source voltage (VDSS) of 100V, the MOSFET is suitable for headlight applications requiring multiple LEDs.
A TSOP6F package of the device claims an allowable power dissipation of 1.5W.
In addition, the footprint of the TSOP6F package is 70% smaller than that of a SOP8 package.
Mass production shipments begin in April.
Highlights of the latest small Low-On-Resistance MOSFETs from the company are available here:
View the Press release here: