Littelfuse and Monolith Semiconductor have launched two 1200V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs designed to outperform silicon MOSFETs and IGBTs for ultra-fast switching in power conversion systems.
Typical applications for the new SiC MOSFETs include Electric vehicles, industrial machinery, renewable energy (e.g., solar inverters), medical equipment, switch-mode power supplies, uninterruptible power supplies (UPSs), motor drives, high-voltage DC/DC converters, and induction heating.
Notably, the LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer ultra-low on-resistance (RDS(ON)) levels of just 120 milliohms and 160 milliohms respectively.
As per the announcement, the devices outperform their silicon MOSFET counterparts substantially in terms of blocking voltage, specific-on resistance, and junction capacitances. They also offer a combination of high operating voltages and ultra-fast switching that traditional power transistor solutions such as silicon IGBTs with similar current ratings and packages.
“These new SiC MOSFETs provide power converter designers with a state-of-the-art alternative to traditional silicon-based transistors,” said Michael Ketterer, product marketing manager for Power Semiconductors at Littelfuse. “Their inherent material characteristics and ultra-fast switching capabilities offer a variety of design optimization opportunities including increased power density, higher efficiency, and the potential for lower bill-of-material costs.”
A key benefit of the devices is the low gate charge and output capacitance combined with the low on-resistance allowing minimal power dissipation, higher efficiency and a reduction in the size and sophistication of the cooling techniques required.
LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450.
Sample requests may be placed through authorized Littelfuse distributors worldwide.