GaN/SiC Transistor Targets C-band Radar


Integra reveals a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz. This IGT5259L50 is an ideal solution for C-band pulsed radar system designs that require immediate full power and high gain.

The IGT5259L50 is fully-matched to 50 Ohms and supplies 50W of peak pulsed output power at 50V drain bias. This product covers the frequency range 5.2-5.9 GHz with instantaneous response, and features 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions.

The device is housed in a RoHS-compatible metal/ceramic flange-mount package with gold metallization. It provides excellent thermal dissipation, and measures 0.800” (20.32mm) wide and 0.400” (10.16mm) in length.

It is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D.

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