Bringing size, weight and power efficiency of Gallium Nitride (GaN) technology for designers and manufactures of launch vehicles and satellites, Renesas has rolled out what it claims the first radiation-hardened, low side GaN field effect transistor (FET) driver and GaN FETs from Intersil. These target primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications.
The ISL70023SEH GaN FET or ISL70024SEH GaN FET can be combined with the ISL70040SEH low side GaN FET driver and the ISL78845ASEH PWM controller to create launch vehicle and satellite switched mode power supplies.
These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.
The GaN FETs include ISL7023SEH 100V, 60A GaN FET and ISL70024SEH 200V, 7.5A GaN FET.
“These GaN FETs provide up to 10 orders of magnitude better performance than silicon MOSFETs while reducing package size by 50 percent. They also reduce power supply weight and achieve higher power efficiency with less switching power loss”, Renesas claims.
Both GaN FETs require less heat sinking due to reduced parasitic elements, and their ability to operate at high frequencies allows the use of smaller output filters, which achieve excellent efficiencies in a compact solution size.
Apart from leveraging the size, weight and power efficiency of GaN, the new components also leverage the benefits of GaN technology to encounter ionising radiation.
The ISL70040SEH provides reliable performance when exposed to total ionizing dose (TID) or heavy ions, and is immune to destructive single event effects (SEE) up to 16.5V with linear energy transfer (LET) of 86MeV•cm2/mg. The GaN FET driver uses a MIL-PRF-38535 Class V manufacturing flow and wafer-by-wafer radiation assurance testing, Renesas says.
“We are pleased to see Renesas Electronics continue Intersil’s six decades of spaceflight product development and leadership,” said Alex Lidow, EPC’s co-founder and CEO. “It is especially gratifying and exciting to see our innovative enhancement-mode gallium nitride-on-silicon (eGaN®) FET technology at work with Renesas’ new radiation-hardened GaN FET driver. These products demonstrate how eGaN technology increases the performance and reduces the cost for applications currently being served by MOSFETs.”
The rad-hard ISL70023SEH 100V, 60A GaN FET and ISL70024SEH 200V, 7.5A GaN FET are available now in hermetically sealed 4-lead 9.0mm x 4.7mm SMD packages.
The rad-hard ISL70040SEH low side GaN FET driver is available now in a hermetically sealed 8-lead 6mm x 6mm SMD package.
Read Press release: https://www.renesas.com/en-hq/about/press-center/news/2018/news20180207.html