Toshiba has started shipping two new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. These devices are suited to power supply applications in industrial equipment as well as motor control applications.
Fabricated with Toshiba’s latest low-voltage U-MOS IX-H trench process, which optimises the element structure, the TPH3R70APL and TPN1200APL deliver what is believed to be the industry’s lowest-in-class on-resistance of 3.7 and 11.5mΩ respectively.
The devices exhibit low output charge (QOSS: 74/24nC) and low gate switch charge (QSW: 21/7.5nC) and allow for a 4.5V logic level drive.
Compared with current devices that the U-MOS VIII-H process, the new devices boast lower key figures of merit for MOSFETs for switching applications including RDS(ON) • Qoss, and RDS(ON) • QSW.
The TPH3R70APL is housed in a 5x6mm SOP advance package and can handle drain currents (ID) up to 90A while the TPN1200APL is in a 3x3mm TSON advance package and handles ID levels up to 40A.