Alpha and Omega Semiconductor have launched a 25V N-Channel MOSFET in a dual DFN 3.3×3.3 package which is ideal for synchronous buck converters. This new XSPairFET offers a higher power density compared to existing solutions and is ideally suited for computing, server and telecommunication markets.
Optimal power efficiency sets a new industry standard for high power density applications.
The AONE36132 is an extension to the XSPairFET lineup. It claims a lower switch node ringing due to lower parasitic inductance.
AONE36132 has an integrated high-side and low-side MOSFETs (7mOhms and 2mOhms maximum on-resistance, respectively) within a DFN 3.3×3.3 XSPairFET package.
The low-side MOSFET source is connected directly to the exposed pad on PCB to enhance thermal dissipation. Using an existing notebook design under typical conditions, 19V input Voltage, with 1.05V output Voltage, and a 21A output load condition, the AONE36132 had more than a two percent efficiency improvement when compared to a single DFN 5×6 high side and single DFN 5×6 low side configuration.
“The AONE36132 is the latest addition to the XSPairFET family which incorporates innovative technology to increase power density and improve efficiency for today’s demanding applications,” said Peter H. Wilson, Marketing Director of MOSFET product line at AOS.
The AONE36132 is immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces is $0.91.