High-speed 256Mb CMOS DRAMs Aim Wearables & Consumer Apps


Alliance Memory has added new 256Mb high-speed CMOS SDRAMs in the 54-pin 400-mil plastic TSOP II package. They can be utilised as drop-in, pin-for-pin-compatible replacements for a number of similar solutions used for image storage and video buffering in consumer and industrial products, and wearables.

“Alliance Memory is the market’s SDRAM leader, offering the broadest product lineup of any vendor, with densities from 16Mb to 512Mb in a wide range of configurations and packages,” said TJ Mueller, Vice President of Marketing at Alliance Memory. “We are excited to add these new 256Mb devices to our portfolio, which complement our existing x16 and x32 parts.”

The AS4C32M8SA and AS4C64M4SA are internally configured as four banks of 32M x 8 bits and 64M x 4 bits, respectively.


The memories offer a synchronous interface, operate from a single +3.3V (± 0.3V) power supply, and are lead (Pb)- and halogen-free.

The devices claim fast access time from clock down to 5.4 ns and clock rates to 166 MHz.

They are available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) operating temperature ranges.

The SDRAMs offer programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence.

Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Samples and production quantities of the new SDRAMs are available now, with lead times of four to eight weeks for large orders. Pricing for U.S. delivery starts at $1.95 per piece.

New Memory Tech For 5G Smartphones

Click here to read Press release.



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