Vishay has rolled out a new 25 V n-channel power MOSFET that claims the industry’s lowest maximum on-resistance for such a device: 0.58 mΩ at 10 V. The device enhances switching performance for DC/DC conversion in telecom and server power supplies, battery switching in battery systems, and load switching for 5 V to 12 V input rails.
Offered in the 6 mm by 5 mm PowerPAK SO-8 package, the SiRA20DP is one of the only two 25 V MOSFETs in the world with maximum on-resistance below 0.6 mΩ.
Delivering increased efficiency and power density for a wide range of applications, the Vishay Siliconix SiRA20DP offers the lowest gate charge and gate charge times on-resistance figure of merit (FOM) for devices with on-resistance below 0.6 mΩ, according to the firm.
In comparison, the SiRA20DP offers lower typical gate charge of 61 nC and a 32 % lower FOM of 0.035 ΩnC. All other 25 V n-channel MOSFETs feature on-resistance that is 11 % higher or more.
“The low on-resistance minimises conduction losses to enable higher power density, which is ideal for OR-ring functions in redundant power architectures,” claimed the firm.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiRA20DP are available now, with lead times of 15 weeks for large orders.
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