The Infineon Technologies company, IR HiRel, has announced new radiation hardened power MOSFETs designed for mission-critical applications in space. Some applications include space-grade DC-DC converters, intermediate bus converters, motor controllers and other high speed switching designs. Compared to previous technologies, the MOSFETs are said to offer size, weight and power improvements.
The 100 V, 35 A MOSFETs combine low RDS(on) and faster switching times which reduces the power losses and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
According to the firm, the IRHNJ9A7130 and IRHNJ9A3130, are ideally suited to mission-critical applications requiring an operating life up to and beyond 15 years. Featuring the proprietary N-channel R9 technology platform, the devices are ideal for high-throughput satellites, where the cost-per-bit-ratio can be significantly reduced.
The MOSFETs are fully characterized for TID (total ionizing dose) immunity to radiation of 100 kRads and 300 kRads respectively.
The devices are said to have improved Single Event Effect (SEE) immunity and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90 MeV/(mg/cm²); at least 10 percent higher than previous generations.
Both of the new devices are packaged in a hermetically sealed, lightweight, surface mount ceramic package (SMD-0.5) measuring just 10.28 mm x 7.64 mm x 3.12 mm. They are also available in bare die form.
Samples and production quantities of both the IRHNJ9A7130 and IRHNJ9A3130 are available.