Fairchild Semiconductor has launched a new generation of N-channel MOSFETs which it claims meets the higher power density, system efficiency and exceptional reliability requirements of the latest telecom, server, electric vehicle (EV) charger and solar products.
The SuperFET III MOSFETs combine high reliability, low EMI, excellent efficiency and superior thermal performance to make it an ideal choice for high performance applications with demanding robustness and reliability requirements.
“Regardless of their industry, our customers are seeking dramatic improvements in efficiency, performance and reliability with each new product generation and are also striving to get their new products to market faster. In addition to designing our new SuperFET III MOSFETs to help customers meet their key product goals, we ensured the devices would also help reduce BOM costs, shrink board space and simplify the product design,” said Jin Zhao, Vice President and General Manager of Fairchild’s High Power Industrial division.
SuperFET III technology features low Rdson for improved efficiency. It achieves this leveraging an advanced charge balancing technology which also enables 44 percent lower Rdson than its SuperFET II predecessors, in the same package size, the firm says.
An exceptional ruggedness and reliability of the product is by virtue of its best-in-class body diode and three times better single pulse Avalanche Energy (EAS) performance than its closest competitor, according to the firm.
In addition, the lower peak drain-source voltage during turn off of the 650V SuperFET III improves system reliability in low temperature operation.
These reliability advantages are particularly important for industrial applications such as solar inverters, Uninterruptable Power Supplies (UPS) and EV chargers which must be capable of enduring higher or lower external ambient temperatures.
The SuperFET III MOSFET family is available today in multiple package and parametric options. More information can be found at https://www.fairchildsemi.com/about/press-releases/Press-Release.html?id=20160920-SuperFET3