Vishay Intertechnology launched two 650V fast body diode n-channel power MOSFETs featuring extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, external electric vehicle (EV) charging stations, and LED, high-intensity discharge (HID), and fluorescent ballast lighting.
“The new EF Series MOSFETs including Siliconix SiHx21N65EF, SiHx28N65EF, and SiHG33N65EF provide additional voltage headroom for industrial, telecom, and renewable energy applications when desired”, said Vishay.
Built on E Series superjunction technology, the MOSFETs feature a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. Also, reliability is increased in zero voltage switching (ZVS) / soft switching topologies such as phase-shifted bridges, LLC converters, and 3-level inverters.
The 21 A SiHx21N65EF is offered in five packages, while the 28 A SiHx28N65EF and 33 A SiHG33N65EF are each available in two. The devices feature low on-resistance down to 157 mΩ, 102 mΩ, and 95 mΩ, respectively, and ultra-low gate charge.
The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are RoHS-compliant and halogen-free.
Samples and production quantities of the new 650 V EF Series MOSFETs are available now, with lead times of 16 to 18 weeks for large orders.