Central Semiconductor introduces its newest energy efficient, 800 Volt N-Channel MOSFETs designed for high voltage, fast switching applications such as power supplies, power inverters and solid state lighting (SSL).
“For optimal efficiency, the MOSFET combines high voltage capability with ultra low rDS(ON) of 0.37Ω, low threshold voltage, and low gate charge of 7.6nC, which surpass the operational performance of similarly rated standard MOSFETs”, claims the company.
The CDM22012-800LRFP is a 12A, 800V UltraMOS MOSFET designed to minimize total conduction losses while maximizing power density.
Offered in a TO-220FP (Full Pack) package, the device is available from Digi-Key, Future Electronics and Mouser Electronics. Sample devices are available upon request direct from Central Semiconductor. A 6A, 800V device is also planned for release later this year.
For further details, view the full Press release.