GLF Integrated Power announced high-performance load switches offering designers an ultra-efficient alternative for improving power efficiency in wearables, mobile medical devices and other battery-powered devices. The devices offer a significant improvement in performance over competing load switches and discrete devices.
The GLF71311 load switch comes in a tiny 0.97 x 0.97mm form factor, and features an off-state leakage current (ISD) of 5nA (typical) at 3.3 V input, a logic operating current (IQ) of less than 10 nA (typical) up to 5.5V, an on-state resistance (RON) of 34 mOhms (max) at 5.5V and 41mOhms (max) at 3.3V.
The switch maximizes efficiency and saves power by turning off power-hungry subsystems when not in use, which results in a low off-state leakage current of 5nA. This off-state leakage current is up to 50 times lower than the nearest competitive load switch device. Other factor which reduces both power dissipation and battery drain compared with other fully integrated load switches is the low on-state resistance.
The new device saves space compared to discrete FET solutions by eliminating the need for external components to control inrush current slew rate. Also, its max ISD off state leakage is up to 10 times lower than the typical max rating for a discrete FET at 25 degree Centigrade.
“Pushing the envelope for efficiency and battery life, our new ultra-low-leakage GLF71311 offers off-state efficiency performance that is orders of magnitude better than discrete solutions. This amazingly small amount of leakage is a big deal for customers trying to optimize battery life in wearables”, said Eileen Ni Sun, president and founder of GLF.
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