Samsung Electronics has begun mass producing the industry’s first 4-gigabyte (GB) DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface, for use in high-performance computing (HPC), advanced graphics and network systems, as well as enterprise servers.
Being more than seven times faster than the current DRAM performance limit, the new HBM solution allows faster responsiveness for high-end computing tasks including parallel computing, graphics rendering and machine learning.
With Samsung’s efficient 20nm process and advanced HBM chip design, the DRAM offers high energy-efficiency, reliability and small dimensions well suited for next-generation HPC systems and graphics cards.
“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies. Also, in using our 3D memory technology here, we can more proactively cope with the needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market”, said Sewon Chun, senior vice president, Memory Marketing, Samsung Electronics.
The DRAM features 256GBps of bandwidth, which is double that of a HBM1 DRAM package. This is equivalent to a more than seven-fold increase over the 36GBps bandwidth of a 4Gb GDDR5 DRAM chip, which has the fastest data speed per pin (9Gbps) among currently manufactured DRAM chips. The 4GB HBM2 also enables enhanced power efficiency by doubling the bandwidth per watt over a 4Gb-GDDR5-based solution, and embeds ECC (error-correcting code) functionality to offer high reliability.
In addition, Samsung plans to produce an 8GB HBM2 DRAM package within this year. By specifying 8GB HBM2 DRAM in graphics cards, designers will be able to enjoy a space savings of more than 95 per cent, compared to using GDDR5 DRAM, offering more optimal solutions for compact devices that require high-level graphics computing capabilities.