World’s Most Integrated Power Amplifier Module For 3G/LTE Smartphones


ACCO has introduced industry’s first and the worlds most integrated power amplifier module for 3G / LTE Smartphones, as claimed by the company. As stated in the release, the company has developed and patented a unique transistor design that delivers the performance of typical gallium arsenide (GaAs) power amplifiers yet uses standard CMOS fabrication processes.

As mentioned, the use of standard CMOS processing brings the advantages of Moore’s Law to the final non-silicon “holdout” in the phone, the RF front-end. This allows the entire smartphone to ride the same decreasing cost curve while increasing functionality and reliability as experienced in the rest of the electronics industry.

According to the press release, the AC26120, a CMOS Multi-mode Multi-band Power Amplifier (MMPA) suited for internet of things (IoT) applications. It supports quad-band GSM/EDGE and 12-band 3G/LTE. Adding further, Greg Caltabiano, CEO of ACCO said, “ACCO’s technology drives the integration of all the PAs and controllers into a single die, eliminating complex manufacturing techniques that use unreliable and expensive gold bonding wires. In addition, the consistent CMOS fabrication process enables the replacement of 50+ individual discrete components with a single integrated passive device.”


The features of AC26120 are as highlighted below:
• Standard CMOS process
• Low profile LGA package (at 0.69mm) for thin handset designs
• Smallest MMPA at 5x5mm
• Integrates multiple modes: GSM, EDGE, WCDMA, TD-SCDMA and LTE
• Covers multiple frequency bands: 1, 2, 3, 4, 5, 8, 20, 23, 25, 26, 27, 34, 39
• Supports both Linear GSM and Vramp GSM for compatibility with leading platforms
• Dedicated amplifier path for mid/low power mode to get superior performance
• APT and ET compatible
• Flexible platform configuration with multiple MIPI and GPIO modes
• Fully integrated input and output match networks

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