Leti And GlobalFoundries Tie-UpTo Develop 22nm FD-SOI

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According to press release, Leti is supporting Globalfoundries’ 22nm fully-depleted silicon-on-insulator (FD-SOI) semiconductor platform, called 22FDX. The following strategic partnership is expected to help a broad range of designers who can utilise FD-SOI technology’s significant strengths in ultra-low-power and high performance in their IoT and mobile devices with 22nm technology.

FD-SOI, is an alternative to bulk silicon as a substrate for building CMOS devices. Transistors built on FD-SOI have a very thin (shallow) channel, which improves the gate’s ability to remove carriers from that channel when the device needs to be switched Off. In principle, FD-SOI offers better performance than conventional bulk silicon on deep submicron process technologies, with particular benefits for low-power circuits.

As mentioned in the release, the 22nm FD-SOI process offers operating voltages down to 0.4V, which is good for dynamic power consumption and heating. According to Globalfoundries, the 22FDX platform delivers a 20% smaller die size and 10% fewer masks than 28nm, as well as nearly 50% fewer immersion lithography layers than foundry FinFET.

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