New power modules with improved package technology enable smaller inverter systems. Mitsubishi has unveiled its latest module that reduces power loss by about 20 percent and thermal resistance by 10 percent. Therefore, making the module suited for high-voltage converter systems, including traction and electric power applications.
The above reduction in power losses and thermal resistance can be achieved using carrier stored trench bipolar transistor (CSTBT) chip and relaxed field of cathode (RFC) diode chip, that reduces the thickness on the chip. By reducing the thickness of insulated gate bipolar transistors (IGBT) chip a reduction of static and dynamic losses of IGBT chip can be realised.
According to the press release, the X-Series HVIGBT module are high-power modules and key for power systems that require large capacity, high reliability and superb efficiency. The module aims to deliver high output current and reliable design with a specified operating temperature upto 150 degrees Celsius, as mentioned in the news release. Adding further the module is specified for 6.5kV / 1000A power for increased capacity.
According to Mitsubishi, the sale will start from November 30.