Voltage Variable Attenuators Delivering Upto 1000x Improvement In Linearity Over GaAs Products

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The latest voltage variable attenuators (VVAs) RF devices from IDT provides 1000X improvement in linearity over GaAs products. Their low insertion loss reduces RF chain path loss, while their high linearity improves system data rates. The latest voltage variable attenuators (VVAs) RF devices match popular footprints and are ideal for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communication/data equipment, test/ATE equipment, military systems, JTRS radios, and HF, VHF and UHF radios.

An attenuator is an electronic device that reduces the power of a signal without appreciably distorting its waveform. It is effectively the opposite of an amplifier, though the two work by different methods. While an amplifier provides gain, an attenuator provides loss, or gain less than one.

The F2255 and F2258 the device covers 1MHz to 6MHz frequency range delivering the lowest insertion loss with high linearity, as claimed by IDT. According to the company, “The F2258 device has an Input IP3 of up to 65dBm vs 35dBm, a maximum attenuation slope of 33dB/Volt vs. 53dB/Volt; minimum return loss up to 6000MHz, 12.5dB vs. 7dB; and operating maximum temperature range of 105C Vs 85C. The F2255 device supports a frequency range down to 1MHz and has a maximum attenuation slope of 33dB/Volt. Both devices have bi-directional RF ports, support a single positive supply voltage of either 3V or 5V and have an operating temperature range of -40 to 105C.”

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Adding further, the release mentions that both the devices come in a compact 3mm x 3mm, 16-pin TQFN package. The VVAs are based on silicon technology that offers the advantages of improved RF performance, robust electrostatic discharge (ESD) protections, better moisture sensitivity levels (MSL), improved thermal performance, lower current consumption and the proven reliability of silicon technology compared to that of GaAs based semiconductor technology.

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