Looking to meet growth in demand for flash memory, TAEC has unveiled the new generation of BiCS (Bit Cost Scalable) FLASH, a 3D stacked cell structure memory for the ultra-high density storage devices suited for applications including consumer SSDs, smartphones, tablets, memory cards, and enterprise SSDs for data centers. As claimed by the company, it is the world’s 256Gbit 48 layer device that features industry-leading 3-bit-per-cell TLC (triple-level cell) technology.
According to the press release, BiCS FLASH is based on a leading-edge 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND flash memory, while enhancing write/erase reliability endurance and boosting write speeds. In addition to this, a TLC flash is a type of solid-state NAND flash memory that stores three bits of data per cell of flash media. TLC flash is cheaper than single-level cell (SLC) and multi-level cell (MLC) solid-state flash memory, which makes it appealing for consumer devices that use solid-state storage.
Scott Nelson, senior vice president of Toshiba America Electronic Components’ memory business unit said, “Our announcement of BiCS FLASH, the industry’s first 48-layer 3D technology, is very significant in that we are enabling a competitive, smooth migration to 3D flash memory – to support the storage market’s demand for ever-increasing densities.”