ST Microelectronics And French IM2NP Collaborate To Develop Next-Gen Nano-Electronic Components


In-order to develop the next generations of highly-reliable ultra-miniaturised electronic components, ST has collaborated with a French Institute of Materials, Microelectronics and Nanosciences in Provence (IM2NP). The Radiation Effects and Electrical Reliability (REER) Joint Laboratory is a multi-site research establishment that will bring together teams from the IM2NP Institute, based in Marseille and Toulon and specialist engineers from the ST facility in Crolles, near Grenoble to identify the challenges and hurdles at all stages of integration which need to overcome for the development of future nano-electronic technologies.

The published release mentions that the Joint laboratory aims to focus on two key aspects namely the effect of radiation on digital nanometer-scale circuits and the electrical reliability of nanometer-scale using CMOS (complementary metal-oxide semiconductor) technologies. The study relates the intrinsic constraints of electronic components (electrical fields, mechanical stress, temperature, etc.) and some environmental constraints (especially particle radiation from natural or artificial sources) that are becoming an increasingly critical issue for current and future generations of integrated circuits.

The collaboration will also focus on the most advanced microelectronic technologies, such as the 28-nanometer technology node and beyond, in particular the FD-SOI (fully depleted silicon-on-insulator) industrial cluster developed by ST at its Crolles site, as mentioned in the release.


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