Gallium Nitride (GaN) will be the next big change in defense. The use of GaN over the conventional technology enhances the performance of the device under extreme conditions sans data aberrations. Macom in a similar trade offers a wide gamut of RF power transistors that use GaN as the main component to meet today’s demanding applications in defense. Leveraging deep experience in RF, MACOM engineers are expanding the power transistor family to fuel the future of military and commercial radars. These rugged devices deliver greater flexibility and multi-function capability in your radar communications such as high gain, efficiency, bandwidth and ruggedness over a wide bandwidth; the gold metallised matched GaN on Silicon Carbide (SiC) is widely accepted in applications like military radar, ATC, general purpose for pulsed or CW applications, avionics and more. Further, most of these devices are constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance apart from high breakdown voltages for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. While device using ‘TRUE SMT’ plastic-packaging technology with GaN on SiC delivers unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight.
The recent emergence of GaN based high electron mobility transistor (HEMT) power amplifiers in radar system enable system designers to use smaller energy storage capacitors, and maintain the same number of power amplifiers when increasing the overall transmit power. This new GaN-driven capability is yielding a new generation of more agile, rugged radar systems optimised for increasingly demanding performance requirements and environmental conditions. By replacing the silicon material in these packages with GaN, improvements in power density and efficiency have been achieved.
MACOM is leading the RF semiconductor industry in GaN power transistor packaging technology with the introduction of its advanced GaN in Plastic power transistor portfolio for high-performance military and civilian radar and communications applications, as claimed by the company. GaN in Plastic-packaged power transistors set a new standard for harnessing high power in small enclosures. Scaling to power levels up to 90W –the industry’s highest power for this product category – in standard 3mm x 6mm dual-flat no leads (DFN) packaging, MACOM’s breakthrough GaN in Plastic-based power transistors defy the power, size and weight limitations of competing GaN-based offerings to enable a new generation of high power, ultra compact radar systems for use in traditional and next-generation fixed-installation and mobile radar applications.
To achieve this new standard, MACOM, proprietary thermal dissipation techniques ensured that the GaN in Plastic power amplifiers offer comparable reliability to conventional ceramic-packaged GaN based offerings. MACOM’s approach optimises the transistor die layout and uses advanced heat sinking and die attachment methods. These transistors operate at 50V drain bias resulting in outstanding power density and performance, higher efficiency, and smaller impedance matching circuits due to improved device parasitic. The high voltage operation also benefits overall system design with smaller energy storage capacitors and lower current draw. Additionally, GaN in Plastic-based power transistors are also lightweight when compared to ceramic-packaged GaN based offerings resulting in weight reduction and ensuring greater ease of movement for mobile radar systems.
|Part||Description||Min Frequency (MHz)||Max Frequency (MHz)||Gain (dB)||Pulse Width (µs)||Duty Cycle (%)||Output Power (W)||Package||Application|
|MAGX-000035-045000||GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500MHz, 1 ms Pulse, 10 per cent Duty||3500||18||1000||10||45||Flange Ceramic Pkg||Civilian and Military Pulsed Radar|
|MAGX-001090-600L00||GaN on SiC HEMT Pulsed Power Transistor 600W Peak, 1030 to 1090 MHz, 32 Âµs Pulse, 2 per cent Duty||1030||1090||21.4||32||2||600||Flange Ceramic Pkg||Civilian Air Trafic Control (ATC), L Band Secondary radar for IFF and mode S avionics / Military Radar for IFF and Data Links|
|MAGX-001090-600L0S||GaN on SiC HEMT Pulsed Power Transistor 600W Peak, 1030 to 1090 MHz, 32 Âµs Pulse, 2 per cent Duty||1030||1090||21.4||32||2||600||Flangeless Ceramic Pkg||Civilian Air Trafic Control (ATC), L Band Secondary radar for IFF and mode S avionics / Military Radar for IFF and Data Links|
|MAGX-000025-150000||GaN on SIC HEMT Power Transistor||1||2500||18||300||20||150||29.0 x 17.8 x 4.8||General Purpose for Pulsed or CW Applications|
|MAGX-000912-500L00||GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 960 to 1215 MHz, 128 Âµs Pulse, 10 per cent duty||960||1215||19.8||128||10||500||Flange Ceramic Pkg||Civilian Air Trafic Control (ATC), L Band Secondary radar for IFF and mode S avionics / Military Radar for IFF and Data Links|
|MAGX-000912-500L0S||GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 960 to 1215 MHz, 128 Âµs Pulse, 10 per cent Duty||960||1215||19.8||128||10||500||Flangeless Ceramic Pkg|
|MAGX-001214-500L0S||GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 Âµs Pulse, 10 per cent Duty||1200||1400||19.2||300||10||500||Flangeless Ceramic Pkg||L Band Pulsed Radar|
|MAGX-001214-500L00||GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 960 to 1215 MHz, 128 Âµs Pulse, 10 per cent Duty||1200||1400||19.2||300||10||500||Flange Ceramic Pkg||L Band Pulsed Radar|
|MAGX-000035-05000P||GaN Wideband 50 W Pulsed Transistor in Plastic Package DC – 3.5 GHz||3500||17||3000||10||50||3x6mm PDFN-14LD||–|
|MAGX-000035-01500P||GaN Wideband 15 W Pulsed Transistor in Plastic Package DC – 3.5GHz||3500||14.2||3000||20||17||3x6mm PDFN-14LD||–|
|MAGX-000035-09000P||GaN Wideband 90 W Pulsed Transistor in Plastic Package DC – 3.5GHz||3500||17.5||1000||10||90||3x6mm PDFN-14LD||–|
|MAGX-003135-120L00||GaN on SiC HEMT Pulsed Power Transistor 120W Peak, 3.1 to 3.5 GHz, 300 Âµs Pulse, 10 per cent Duty||3100||3500||11.8||300||10||120||Flange Ceramic Pkg||Civilian and Military Pulsed Radar|
|MAGX-001214-250L00||GaN on SiC HEMT Power Transistor||1200||1400||19||300||10||250||Flange Ceramic Pkg||L Band Pulsed Radar|
|MAGX-000912-250L00||GaN on SiC HEMT Power Transistor||960||1215||19||128||10||250||Flange Ceramic Pkg||Avionics: Mode S, TCAS, JTIDS, DME, TACAN|
|MAGX-000912-125L00||GaN on SiC HEMT Power Transistor||960||1215||20||128||10||125||Flange Ceramic Pkg||Avionics: Mode S, TCAS, JTIDS, DME, TACAN|
|MAGX-001220-100L00||GaN on SiC HEMT Power Transistor||1200||2000||14||500||10||100||Flange Ceramic Pkg||General Purpose for Pulsed or CW Applications / Commercial Wireless Infrastructure / Civilian And Military Radar / Public Radio and more|
|MAGX-001214-125L00||GaN on SiC HEMT Power Transistor||1200||1400||19||300||10||125||Flange Ceramic Pkg||L Band Pulsed Radar|
|MAGX-002731-100L00||GaN on SiC HEMT Power Transistor||2700||3100||12||500||10||100||Flange Ceramic Pkg||Civilian and Military Pulsed Radar|
|MAGX-002731-180L00||GaN on SiC HEMT Power Transistor||2700||3100||11||300||10||180||Flange Ceramic Pkg||Civilian and Military Pulsed Radar|
|MAGX-002731-180L0S||GaN on SiC HEMT Pulsed Power Transistor||2700||3100||11||300||10||180||P-259||Civilian and Military Pulsed Radar|
|MAGX-000912-650L0S||GaN on SiC HEMT Pulsed Power Transistor||960||1215||20||128||10||Earless Flange||L Band Pulsed Radar|
|MAGX-001214-650L00||GaN on SiC HEMT Pulsed Power Transistor 650W Peak, 1200-1400 MHz, 300 Âµs Pulse, 10 per cent Duty||1200||1400||19.5||300||10||650||27.94 x 19.44 x 3.74mm||L Band Pulsed Radar|
|MAGX-000035-015000||GaN on SiC HEMT Pulsed Power Transistor, 15 W, DC – 3.5GHz||3500||15||3000||20||15||Flange Ceramic Pkg||Commercial Wireless Infrastructure / Civilian And Military Radar / Public Radio and more|
|MAGX-000035-01500S||GaN on SiC HEMT Pulsed Power Transistor||3500||15||3000||20||15||Flangeless Ceramic Pkg||Commercial Wireless Infrastructure / Civilian And Military Radar / Public Radio and more|
|MAGX-001090-700L0x||GaN on SiC HEMT Pulsed Power Transistor||1030||1090||20.7||32||6||700||Standard flange or earless||Civilian Air Trafic Control (ATC), L Band Secondary radar for IFF and mode S avionics|
|MAGX-000912-650L00||960||1215||20||128||10||Standard flange||L Band Pulsed Radar|