New Fast Body Diodes For Renewable Energy Application

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In a series of recent product launches, Vishay has unveiled a new 600V EF series of fast body diode n-channel power MOSFET that exhibits low reverse recovery charge and on-resistance, which is aimed at delivering reliable services and save energy in industrial, telecom, computing, and renewable energy applications. Reverse recovery charge is the charged stored within the diode when instantaneous switched from a specified forward current (normally 0.5A) to a specified reverse current. Therefore, pushing a reverse current through the diode is actually the way of making it stop to conduct. Besides, on resistance is one of the key parameters which is a measure of the variation of the on resistance of the switch with varying input voltage and is usually specified over the full signal range or a limited signal range.

According to the press release, “SiHx21N60EF, SiHx47N60EF, and SiHx70N60EF are the new 600V EF Series MOSFETs. Built on second-generation super-junction technology, the 600V fast body diode MOSFETs released today provide a complement to Vishay’s existing standard E Series components, expanding the company’s offering to devices that can be used in zero voltage switching (ZVS)/soft switching topologies such as phase-shifted bridges and LLC converter half bridges. The 21 A SiHx21N60EF is offered in four packages, while the 47 A SiHx47N60EF and 70A SiHx70N60EF are each available in two. The devices feature ultra-low on-resistance of 176 mΩ, 65 mΩ and 38mΩ, respectively and low gate charge. These values translate into extremely low-conduction and switching losses to save energy in high-power, high-performance switch mode applications”

The release also mentions, “The SiHx21N60EF, SiHx47N60EF and SiHx70N60EF increases reliability in these applications by offering a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress.”

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