As the defense industry moves towards the use gallium nitride (GaN) technology, adapting to the change, Freescale announced the launch of first GaN RF power transistors. GaN delivers higher power conversion efficiencies, faster switching speeds and greater power densities than silicon, enabling the creation of power transistors that are much smaller in size and that outperform traditional devices. This is made possible due to the wider band gap, higher critical electric field and very high electron mobility characteristics that GaN provides. While GaN migration has been cost prohibitive in the past, recent commercial and technological advances are driving manufacturing costs lower.
According to Freescale, MMRF5014H GaN RF power transistor for military and industrial applications, lead the industry in thermal and wideband RF performance for 100 W-class GaN transistors. Further, the release mentions, “Freescale’s Airfast family of RF power products covers the entire range of wireless cellular spectrum from 600MHz to 3.8GHz, with multiple semiconductor technology options. The A2G22S160-01S offers state-of-the-art performance in the frequency range between 1800MHz and 2200MHz. With 8dB output back-off (OBO), gain is 15.4 dB and efficiency is 56.7 per cent. Adjacent-channel power (ACP) is -55 dBc with digital pre-distortion (DPD) when driven by two 20 MHz LTE carriers with an aggregate 40 MHz carrier bandwidth.”
“The time is right to deliver GaN solutions to our extremely broad base of telecommunications customers. In addition to utilising the A2G22S160-01S’ excellent performance, our cellular customers can look forward to leveraging Freescale’s high-volume production capability and worldwide customer support,” said Paul Hart, senior vice president and general manager of Freescale’s RF business.
According to the press release, A2G22S160-01S GaN RF power transistor is now in production, with reference designs and other enablement solutions available.
Features of the GaN RF power transistor as listed:
- Decade bandwidth performance
- Low thermal resistance
- Advanced GaN on SiC, offering high power density
- Input matched for extended wide-band performance
- High ruggedness: > 20:1 VSWR
- RoHS Compliant