Toshiba has rolled out a new ultra-compact 40V MOSFET featuring an integrated soft recovery diode (SRD) for low EMI designs. Target applications include high-efficiency AC-DC and DC-DC converters as well as motor drives, for example in cordless tools.
N-channel U-MOS-IX-H MOSFET with integrated SRD is ideal for power supplies and motor drives.
The new device adds to the Trench MOSFETs series based on the company’s latest generation U-MOS-IX-H trench semiconductor process.
“The integrated SRD in the TPH1R204PB is able to keep the spike voltages generated between the drain and source during switching very low. This makes the MOSFET suitable for synchronous rectification in the secondary side of switching power supplies that require low EMI”, according to Toshiba.
According to the Press release, the TPH1R204PB is an N-channel device featuring a maximum on resistance (RDS(ON)) of only 1.2mΩ (@ VGS = 10V) and a rated output charge (QOSS) of just 56nC.
The device is supplied in a SOP advance package measuring just 5mm x 6mm x 0.95mm.
For further details, click here.