To extend battery run-time in portable electronics, Alliance Memory has launched a new line of high-speed CMOS mobile low-power DDR2 (LPDDR2) SDRAMs with densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package.
The devices offer a variety of power-saving features, including 1.2 V/1.8 V operating voltages, to extend battery life in portable electronics, while their high density enables ultra-slim designs.
The LPDDR2 SDRAMs are said to provide reliable drop-in, pin-to-pin compatible replacements for a number of similar solutions in ultra-low-voltage cores and I/O power supplies for mobile devices such as smartphones and tablets.
The chips feature auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.
Featuring a double data rate four-bit prefetch architecture, the LPDDR2 SDRAMs deliver high-speed operation with clock rates of 400MHz and 533MHz, and are available in commercial (-30°C to +85°C) and industrial (-40°C to +85°C) temperature ranges.
The devices offer programmable read or write burst lengths of 4, 8, or 16; an auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.
The RoHS-compliant ICs are lead (Pb)- and halogen-free.
Samples and production quantities of the new LPDDR2 SDRAMs are available now, with lead times of four to eight weeks for production quantities.
For further details, view the full Press release.