A new n-channel Power MOSFET from Vishay is one of the most compact 30 V solutions available for DC/DC conversion and load switching for battery management in devices such as notebook computers, tablets, VR headsets, and DC-DC bricks; H bridges in wireless chargers; and motor drive control for drones.
The new TrenchFET Gen IV power MOSFET is said to deliver increased power density and efficiency for mobile devices, consumer electronics, and power supplies.
Offered in an ultra compact PowerPAK SC-70 package which is 60 % smaller than devices in the PowerPAK 1212, the Vishay Siliconix SiA468DJ offers the industry’s lowest on-resistance and highest continuous drain current for 30 V devices in 2 mm x 2 mm plastic package, according to Vishay.
The device reduces conduction loss and increases efficiency with extremely low on-resistance of 8.4 mΩ at 10 V and 11.4 mΩ at 4.5 V. According to the firm, these values represent a 51 % improvement over previous-generation solutions and a 6 % improvement over the closest competing device.
In addition, the MOSFET’s low gate charge times on-resistance figure of merit (FOM) is optimized for a diverse range of power conversion topologies.
The MOSFET’s 37.8 A continuous drain current is 68 % higher than previous-generation devices and 50 % higher than the closest competing solution. This high current rating offers an ample safety margin for applications that encounter high transient current.
The MOSFET is 100 % RG-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiA468DJ are available now, with lead times of 13 weeks for large orders. Pricing for U.S. delivery only starts at $0.34 per piece.
For further details, view the full Press release.