Available in three different voltages (60V, 80V and 100V), Infineon’s new power MOSFETs in PQFN 3.3 x 3.3 mm and IR MOSFET in PQFN 2×2 mm are highly suitable for wireless charging, adapter and telecom applications.
The small package size enables higher power density and improved efficiency. At the same time it is saving space, reducing parts count, and reducing overall system cost.
The new PQFN package devices are said to deliver between 11 and 40 percent lower R DS(on) than competitive products. The ultra-low gate charge (Q g) reduces switching losses without increasing conduction losses, says the firm.
“In addition, the output capacitance (C OSS) and reverse recovery charge (Q rr) have been optimized, the FOM g (R DS(on) x Q g/gd) improved. This allows the IR MOSFET devices to operate at high switching frequencies of up to 6.78 MHz – as required in resonant wireless charging applications.”
The logic level gate drive provides a low gate threshold voltage (V GS(th)) which means that the MOSFETs can be driven at 5 V and directly from microcontrollers.
The IR MOSFET family is available now in 60 V and 80 V, with a 100 V device in development. Further information is available at www.infineon.com/IR-MOSFET-logiclevel.
For further details, view the full Press release.